Scia Systems – Ion Beam Etching Systems – scia Mill 150 et 200

The scia Mill 150 is designed for highly uniform Ion Beam Etching and Milling of single substrates up to 150 mm diameter. Carriers or wafers are loaded via an automatic handling system. The substrate holder has helium backside cooling and can be tilted and rotated. Typical applications are the structuring of metal films for MEMS and sensors.

The scia Mill 200 is designed for highly uniform Ion Beam Etching and Milling of wafers up to 200 mm diameter. Carriers or wafers are loaded via an automatic handling system.

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Overview

Features

Specifications

Available Models

Technical Specifications

Substrate HolderWater cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 160° in 0.1° steps
Ion Beam SourceCircular microwave ECR-source MW218‑e
NeutralizerTriple plasma bridge neutralizer N-3DC
Typical removal ratesSiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min
Uniformity variation≤ 1.0 %
Base pressure< 1 x 10-6 mbar
System dimensions (W x D x H)1.70 m x 1.70 m x 1.70 m (without electrical rack)
Tool configurations1 process chamber, 1 load-lock optional
Software interfacesSECS II / GEM

The scia Mill 150 is designed for highly uniform Ion Beam Etching and Milling of single substrates up to 150 mm diameter. Carriers or wafers are loaded via an automatic handling system. The substrate holder has helium backside cooling and can be tilted and rotated. Typical applications are the structuring of metal films for MEMS and sensors.

The scia Mill 150 can be used for Ion Beam Etching (IBE) with inert gases. Additionally the system can be applied for Reactive Ion Beam Etching (RIBE) as well as for Chemically Assisted Ion Beam Etching (CAIBE).

The systems are especially appropriate for research and development and low volume production.

Technical Specifications

Substrate DiameterUp to 200 mm
Substrate HolderWater cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps
Ion Beam SourceCircular RF ion beam source RF350‑e
NeutralizerPlasma bridge neutralizer N‑RF
Typical removal ratesSiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min
Uniformity variation≤ 2.0 %
Base pressure< 1 x 10-6 mbar
System dimensions (W x D x H)2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps)
Tool configurationsSingle wafer load-lock, Cluster system with cassette handling
Software interfacesSECS II / GEM

The scia Mill 200 is designed for highly uniform Ion Beam Etching and Milling of wafers up to 200 mm diameter. Carriers or wafers are loaded via an automatic handling system.

A typical application is structuring of complex multilayers of materials with very low contamination. For that reason a SIMS end point detection system can be integrated for recognition of etched species and a defined etch stop.

The scia Mill 200 can be used for Ion Beam Etching (IBE) with inert gases, Reactive Ion Beam Etching (RIBE) as well as Chemically Assisted Ion Beam Etching (CAIBE). The system can be upgraded for Dual Ion Beam Deposition (DIBD), with an additional ion beam sputter source RF120‑e and a target holder.

Cluster tools for high volume production with three process chambers and two cassette load-locks are available.

Key Industries

  • Semiconductor, Solar & Electronics

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Scia Systems

Manufacturer of advanced ion beam and plasma processing systems, scia Systems established itself in a very short time on the…

    • FRANCE

      Emmanuel Milan, Product Manager

      DKSH Technology
      1475 Quai du Rhone
      01702 Miribel
      France

      +33 4 7855 7860

      +33 6 5037 8582

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