Scia Systems – Ion Beam Trimming – scia Trim 200
The scia Trim 200 is designed for high precision film thickness trimming in wafer processing. Typical applications of the system are frequency and thickness trimming in manufacturing of acousto-electrical devices and filters such as bulk acoustic wave (BAW) or surface acoustic wave (SAW) devices, localized pole trimming for thin film heads (TFH) and trimming of precision thin film resistors.
The scia Trim 200 is a high volume production system and accommodates a standard semiconductor cassette handling robot. Cluster tools with two process chambers and two cassette load-locks are available.
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Used for high precision film thickness trimming in wafer processing, the scia Trim 200 is a high volume production system which accommodates a standard semiconductor cassette handling robot. It is used for applications such as frequency and thickness trimming in acousto-electrical device manufacturing, and the production of filters like surface acoustic wave and bulk acoustic wave devices.
The scia Trim 200 is also suitable for trimming precision thin film resistors and localised pole trimming for thin film heads. Cluster tools are available, including two cassette load locks and two process chambers.
Key Features
- Significant yield improvement
- Film thickness homogeneity to be adjusted down to atom level of 0.1 nm
- No edge exclusion with electrostatic chuck
- Sub-nanometer removal with zero base etch function
- Processing of film and wafer materials without restrictions
- Throughput and maintenance optimized design for low production costs
- Processing of wafers with photoresist masks due to good wafer cooling
Technical Specifications
| Substrate Diameter | Up to 200 mm |
|---|---|
| Substrate Holder | Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps |
| Ion Beam Source | Circular RF ion beam source RF350‑e |
| Neutralizer | Plasma bridge neutralizer N‑RF |
| Typical Removal Rates | SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min |
| Uniformity Variation | ≤ 2.0 % |
| Base Pressure | < 1 x 10-6 mbar |
| System Dimensions (W x D x H) | 2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps) |
| Tool Configurations | Single wafer load-lock, Cluster system with cassette handling |
| Software Interfaces | SECS II / GEM |
Key Industries
- Semiconductor, Solar & Electronics
Manufacturer of advanced ion beam and plasma processing systems, scia Systems established itself in a very short time on the…
