Scia Systems – PEVCD/RIE Systems – scia Cube 300/750
The scia Cube 300/750 are designed for large area high density plasma processes of substrates up to 300 mm x 200 mm (scia Coat 300) and up to 750 mm x 750 mm (scia Coat 750). Typical applications are deposition of Diamond Like Carbon (DLC) for optical filters and dielectric films for anti-reflective coatings as well as etching processes with oxygen or halogen chemistry for the structuring of Semiconductors and metals.
Available in :
The scia Cube 300/750 combine plasma excitation by an array of microwave sources. The substrate stage is equipped with an independent a RF bias. Various substrate sizes can be transferred with an automatic vacuum load-lock system.
Key Features
- Plasma Enhanced Chemical Vapor Deposition (PECVD)
- Reactive Ion Etching (RIE)
Technical Specifications
| scia Cube 300 | scia Cube 750 | |
| Substrate size | Up to 300 mm x 200 mm | Up to 750 mm x 750 mm |
|---|---|---|
| Substrate holder | Water cooled, RF bias | Water cooled, RF bias |
| Substrate temperature | Alternatively cryo cooling down to -10°C or heating up to max. 700°C | Alternatively cryo cooling down to -10°C or heating up to max. 850°C |
| Plasma source | Linear microwave ECR-source PL400 and/or RF parallel plate | Linear microwave ECR-source PL1300 and/or RF parallel plate arrangement |
| Power supply | MW-Power: max. 9000 W RF-Power:max. 600 W | MW-Power: max. 48 kW, RF-Power: max. 3 kW |
| Base Pressure | < 1 x 10-6 mbar | < 1 x 10-6 mbar |
| System dimensions (W x D x H) | 1.90 m x 1.30 m x 2.20 m (without electrical rack and pumps) | 3.70 m x 3.40 m x 2.20 m (without electrical rack, pumps and loading system) |
| Tool configurations | 1 process chamber, 1 load-lock | 1 process chamber, 1 loading system, 1 load-lock |
| Software interface | SECS II / GEM | SECS II / GEM |
Key Industries
- Semiconductor, Solar & Electronics
Manufacturer of advanced ion beam and plasma processing systems, scia Systems established itself in a very short time on the…
